Central Semiconductor Corp CP307-2N5308-CT

Central Semiconductor Corp CP307-2N5308-CT electronic component

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Manufacturer No
CP307-2N5308-CT
Package
Die
Packaging
Tray
Description
TRANS NPN DARL 40V 0.3A DIE
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 40 V 300 mA 60MHz 625 mW Surface Mount Die
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Central Semiconductor Corp
Packaging
Tray
Power - Max
625 mW
Mounting Type
Surface Mount
Package / Case
Die
Transistor Type
NPN - Darlington
Operating Temperature
-65°C ~ 150°C (TJ)
Frequency - Transition
60MHz
Supplier Device Package
Die
Vce Saturation (Max) @ Ib, Ic
1.4V @ 200µA, 200mA
Current - Collector (Ic) (Max)
300 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA, 5V
Voltage - Collector Emitter Breakdown (Max)
40 V
AttributeValue
MfrCentral Semiconductor Corp
PackagingTray
Power - Max625 mW
Mounting TypeSurface Mount
Package / CaseDie
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Frequency - Transition60MHz
Supplier Device PackageDie
Vce Saturation (Max) @ Ib, Ic1.4V @ 200µA, 200mA
Current - Collector (Ic) (Max)300 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA, 5V
Voltage - Collector Emitter Breakdown (Max)40 V

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Payment Method

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

Packages

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Product in anti-static bag

Step2: Anti StaticBag

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Packaging box with shipping label

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