Cambridge GaN Devices CGD65C055SP2

Cambridge GaN Devices CGD65C055SP2 electronic component

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Manufacturer No
CGD65C055SP2
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
650V GAN HEMT, 55 MOHM, 27A, BHD
Detailed Description
N-Channel 650 V 27A Surface Mount, Wettable Flank BHDFN-9-1
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Cambridge GaN Devices
Series
P2
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Technology
GaNFET (Gallium Nitride)
Mounting Type
Surface Mount, Wettable Flank
Vgs(th) (Max) @ Id
4.2V @ 10mA
Rds On (Max) @ Id, Vgs
77mOhm @ 10A, 15V
Supplier Device Package
BHDFN-9-1
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
27A
AttributeValue
MfrCambridge GaN Devices
SeriesP2
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT)
TechnologyGaNFET (Gallium Nitride)
Mounting TypeSurface Mount, Wettable Flank
Vgs(th) (Max) @ Id4.2V @ 10mA
Rds On (Max) @ Id, Vgs77mOhm @ 10A, 15V
Supplier Device PackageBHDFN-9-1
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C27A

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

Packages

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Step1: Product

Product in anti-static bag

Step2: Anti StaticBag

Product in individual packaging

Step3: Individual Packaging

Individual packaging box

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Packaging box with shipping label

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