Step1: Product
Cambridge GaN Devices CGD65A130SH2
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Manufacturer
Manufacturer No
CGD65A130SH2
Package
16-PowerVDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
650V GAN HEMT, 130MOHM, DFN8X8.
Detailed Description
N-Channel 650 V 12A Surface Mount 16-DFN (8x8)
Datasheet
Mfr
Cambridge GaN Devices
Series
ICeGaN™
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
+20V, -1V
Technology
GaNFET (Gallium Nitride)
Mounting Type
Surface Mount
Package / Case
16-PowerVDFN
Vgs(th) (Max) @ Id
4.2V @ 4.2mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
182mOhm @ 900mA, 12V
Supplier Device Package
16-DFN (8x8)
Gate Charge (Qg) (Max) @ Vgs
1.9 nC @ 12 V
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
12V
Current - Continuous Drain (Id) @ 25°C
12A
| Attribute | Value |
|---|---|
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| FET Type | N-Channel |
| Packaging | Tape & Reel (TR); Cut Tape (CT) |
| Vgs (Max) | +20V, -1V |
| Technology | GaNFET (Gallium Nitride) |
| Mounting Type | Surface Mount |
| Package / Case | 16-PowerVDFN |
| Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
| Supplier Device Package | 16-DFN (8x8) |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 12 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 12A |
Purchase & Inquiry
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RFQ (Request for Quote)
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Our sales team will respond to your request by email within 24 hours.
Important Notes
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2. Since inventory and pricing may change from time to time, our sales manager will reconfirm your order and notify you if any updates are needed.
Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 3, 2026 - Oct 4, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
Packages
