Cambridge GaN Devices CGD65A130SH2

Cambridge GaN Devices CGD65A130SH2 electronic component

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Manufacturer No
CGD65A130SH2
Package
16-PowerVDFN
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
650V GAN HEMT, 130MOHM, DFN8X8.
Detailed Description
N-Channel 650 V 12A Surface Mount 16-DFN (8x8)
DataSheet
Mfr
Cambridge GaN Devices
Series
ICeGaN™
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
+20V, -1V
Technology
GaNFET (Gallium Nitride)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
16-PowerVDFN
Vgs(th) (Max) @ Id
4.2V @ 4.2mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
182mOhm @ 900mA, 12V
Supplier Device Package
16-DFN (8x8)
Gate Charge (Qg) (Max) @ Vgs
1.9 nC @ 12 V
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
12V
Current - Continuous Drain (Id) @ 25°C
12A
AttributeValue
MfrCambridge GaN Devices
SeriesICeGaN™
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)+20V, -1V
TechnologyGaNFET (Gallium Nitride)
Part StatusActive
Mounting TypeSurface Mount
Package / Case16-PowerVDFN
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
Supplier Device Package16-DFN (8x8)
Gate Charge (Qg) (Max) @ Vgs1.9 nC @ 12 V
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)12V
Current - Continuous Drain (Id) @ 25°C12A

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