Toshiba Semiconductor and Storage RN4902FE(TE85L,F)

Toshiba Semiconductor and Storage RN4902FE(TE85L,F) electronic component

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Manufacturer No
RN4902FE(TE85L,F)
Package
SOT-563, SOT-666
Packaging
Tape & Reel (TR)
Description
TRANS PREBIAS 1NPN 1PNP 50V ES6
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
DataSheet
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Power - Max
100mW
Manufacturer
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Base Product Number
RN4902
Resistor - Base (R1)
10kOhms
Frequency - Transition
200MHz
Supplier Device Package
ES6
Resistor - Emitter Base (R2)
10kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50V
AttributeValue
PackagingTape & Reel (TR)
Part StatusObsolete
Power - Max100mW
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Base Product NumberRN4902
Resistor - Base (R1)10kOhms
Frequency - Transition200MHz
Supplier Device PackageES6
Resistor - Emitter Base (R2)10kOhms
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)50V

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