Toshiba Semiconductor and Storage MT3S111TU,LF

Toshiba Semiconductor and Storage MT3S111TU,LF electronic component

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Manufacturer No
MT3S111TU,LF
Quantity
189
Availability
In Stock
Package
3-SMD, Flat Leads
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
RF TRANS NPN 6V 10GHZ UFM
Detailed Description
RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Gain
12.5dB
Packaging
Tape & Reel (TR); Cut Tape (CT)
Power - Max
800mW
Manufacturer
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Leads
Transistor Type
NPN
Base Product Number
MT3S111
Operating Temperature
150°C (TJ)
Frequency - Transition
10GHz
Supplier Device Package
UFM
Noise Figure (dB Typ @ f)
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max)
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)
6V
AttributeValue
Gain12.5dB
PackagingTape & Reel (TR); Cut Tape (CT)
Power - Max800mW
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Package / Case3-SMD, Flat Leads
Transistor TypeNPN
Base Product NumberMT3S111
Operating Temperature150°C (TJ)
Frequency - Transition10GHz
Supplier Device PackageUFM
Noise Figure (dB Typ @ f)0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max)100mA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)6V

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 4, 2026 - Oct 5, 2026
Shipping Fee
Calculated based on your destination

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