Step1: Product
Toshiba Semiconductor and Storage 2SC5949-O(Q)
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Manufacturer
Manufacturer No
2SC5949-O(Q)
Package
TO-3PL
Packaging
Bulk
Description
TRANS NPN 200V 15A TO-3P
Detailed Description
Bipolar (BJT) Transistor NPN 200 V 15 A 30MHz 220 W Through Hole TO-3P(L)
Datasheet
Mfr
Toshiba Semiconductor and Storage
Packaging
Bulk
Power - Max
220 W
Mounting Type
Through Hole
Package / Case
TO-3PL
Transistor Type
NPN
Base Product Number
2SC5949
Operating Temperature
150°C (TJ)
Frequency - Transition
30MHz
Supplier Device Package
TO-3P(L)
Vce Saturation (Max) @ Ib, Ic
3V @ 1A, 10A
Current - Collector (Ic) (Max)
15 A
Current - Collector Cutoff (Max)
5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A, 5V
Voltage - Collector Emitter Breakdown (Max)
200 V
| Attribute | Value |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Packaging | Bulk |
| Power - Max | 220 W |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Transistor Type | NPN |
| Base Product Number | 2SC5949 |
| Operating Temperature | 150°C (TJ) |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-3P(L) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 1A, 10A |
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
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Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 4, 2026 - Oct 5, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
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