Toshiba Semiconductor and Storage 2SC4793,YHF(J

Toshiba Semiconductor and Storage 2SC4793,YHF(J electronic component

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Manufacturer No
2SC4793,YHF(J
Package
TO-220-3 Full Pack
Packaging
Bulk
Description
TRANS NPN 230V 1A TO-220NIS
Detailed Description
Bipolar (BJT) Transistor NPN 230 V 1 A 100MHz 2 W Through Hole TO-220NIS
DataSheet
Mfr
Toshiba Semiconductor and Storage
Packaging
Bulk
Part Status
Obsolete
Power - Max
2 W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Type
NPN
Base Product Number
2SC4793
Operating Temperature
150°C (TJ)
Frequency - Transition
100MHz
Supplier Device Package
TO-220NIS
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 500mA
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 5V
Voltage - Collector Emitter Breakdown (Max)
230 V
AttributeValue
MfrToshiba Semiconductor and Storage
PackagingBulk
Part StatusObsolete
Power - Max2 W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Transistor TypeNPN
Base Product Number2SC4793
Operating Temperature150°C (TJ)
Frequency - Transition100MHz
Supplier Device PackageTO-220NIS
Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Voltage - Collector Emitter Breakdown (Max)230 V

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