Toshiba Semiconductor and Storage 2SA1182-GR,LF

Toshiba Semiconductor and Storage 2SA1182-GR,LF electronic component

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Manufacturer No
2SA1182-GR,LF
Package
TO-236-3, SC-59, SOT-23-3
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
TRANS PNP 30V 0.5A S-MINI
Detailed Description
Bipolar (BJT) Transistor PNP 30 V 500 mA 200MHz 150 mW Surface Mount S-Mini
DataSheet
Mfr
Toshiba Semiconductor and Storage
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Part Status
Active
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP
Base Product Number
2SA1182
Operating Temperature
125°C (TJ)
Frequency - Transition
200MHz
Supplier Device Package
S-Mini
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector (Ic) (Max)
500 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 1V
Voltage - Collector Emitter Breakdown (Max)
30 V
AttributeValue
MfrToshiba Semiconductor and Storage
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Part StatusActive
Power - Max150 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Transistor TypePNP
Base Product Number2SA1182
Operating Temperature125°C (TJ)
Frequency - Transition200MHz
Supplier Device PackageS-Mini
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 1V
Voltage - Collector Emitter Breakdown (Max)30 V

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