Step1: Product
STMicroelectronics STP12N60M2
Image shown is a representation only
Manufacturer
Manufacturer No
STP12N60M2
Package
TO-220-3
Packaging
Tube
Description
MOSFET N-CH 600V 9A TO220
Detailed Description
N-Channel 600 V 9A (Tc) 85W (Tc) Through Hole TO-220
Datasheet
Mfr
STMicroelectronics
Series
MDmesh™ M2
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
STP12
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
450mOhm @ 4.5A, 10V
Power Dissipation (Max)
85W (Tc)
Supplier Device Package
TO-220
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
538 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
| Attribute | Value |
|---|---|
| Mfr | STMicroelectronics |
| Series | MDmesh™ M2 |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | STP12 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 4.5A, 10V |
| Power Dissipation (Max) | 85W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 538 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Purchase & Inquiry
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Important Notes
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2. Since inventory and pricing may change from time to time, our sales manager will reconfirm your order and notify you if any updates are needed.
Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 3, 2026 - Oct 4, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
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