STMicroelectronics STD6N60DM2

STMicroelectronics STD6N60DM2 electronic component

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Manufacturer
Manufacturer No
STD6N60DM2
Quantity
9
Availability
In Stock
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 600V 5A DPAK
Detailed Description
N-Channel 600 V 5A (Tc) 60W (Tc) Surface Mount TO-252 (DPAK)
DataSheet
Mfr
STMicroelectronics
Series
MDmesh™ DM2
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
4.75V @ 250µA
Base Product Number
STD6N60
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.1Ohm @ 2.5A, 10V
Power Dissipation (Max)
60W (Tc)
Supplier Device Package
TO-252 (DPAK)
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
274 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
AttributeValue
MfrSTMicroelectronics
SeriesMDmesh™ DM2
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id4.75V @ 250µA
Base Product NumberSTD6N60
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs1.1Ohm @ 2.5A, 10V
Power Dissipation (Max)60W (Tc)
Supplier Device PackageTO-252 (DPAK)
Gate Charge (Qg) (Max) @ Vgs6.2 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds274 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5A (Tc)

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