STMicroelectronics STD12N65M2

STMicroelectronics STD12N65M2 electronic component

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Manufacturer
Manufacturer No
STD12N65M2
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET N-CH 650V 8A DPAK
Detailed Description
N-Channel 650 V 8A (Tc) 85W (Tc) Surface Mount DPAK
DataSheet
Mfr
STMicroelectronics
Series
MDmesh™ M2
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
STD12
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
500mOhm @ 4A, 10V
Power Dissipation (Max)
85W (Tc)
Supplier Device Package
DPAK
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
535 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
AttributeValue
MfrSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id4V @ 250µA
Base Product NumberSTD12
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs500mOhm @ 4A, 10V
Power Dissipation (Max)85W (Tc)
Supplier Device PackageDPAK
Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds535 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8A (Tc)

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Packaging boxes
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Shipping Information

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