STMicroelectronics STB60NE06L-16T4

STMicroelectronics STB60NE06L-16T4 electronic component

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Manufacturer
Manufacturer No
STB60NE06L-16T4
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 60V 60A D2PAK
Detailed Description
N-Channel 60 V 60A (Tc) 150W (Tc) Surface Mount D2PAK
DataSheet
Mfr
STMicroelectronics
Series
STripFET™ II
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±15V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
2.5V @ 250µA
Base Product Number
STB60N
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
14mOhm @ 30A, 10V
Power Dissipation (Max)
150W (Tc)
Supplier Device Package
D2PAK
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 4.5 V
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
4150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
AttributeValue
MfrSTMicroelectronics
SeriesSTripFET™ II
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id2.5V @ 250µA
Base Product NumberSTB60N
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs14mOhm @ 30A, 10V
Power Dissipation (Max)150W (Tc)
Supplier Device PackageD2PAK
Gate Charge (Qg) (Max) @ Vgs70 nC @ 4.5 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds4150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C60A (Tc)

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Step2: Vacuum Packaging
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