STMicroelectronics STB15NM60N

STMicroelectronics STB15NM60N electronic component

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Manufacturer
Manufacturer No
STB15NM60N
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 600V 14A D2PAK
Detailed Description
N-Channel 600 V 14A (Tc) 125W (Tc) Surface Mount D2PAK
DataSheet
Mfr
STMicroelectronics
Series
MDmesh™ II
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
STB15N
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
299mOhm @ 7A, 10V
Power Dissipation (Max)
125W (Tc)
Supplier Device Package
D2PAK
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
1250 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
AttributeValue
MfrSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id4V @ 250µA
Base Product NumberSTB15N
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs299mOhm @ 7A, 10V
Power Dissipation (Max)125W (Tc)
Supplier Device PackageD2PAK
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C14A (Tc)

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