SemiQ GP2T040A120U

SemiQ GP2T040A120U electronic component

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Manufacturer
Manufacturer No
GP2T040A120U
Package
TO-247-3
Packaging
Tube
Description
SIC MOSFET 1200V 40M TO-247-3L
Detailed Description
N-Channel 1200 V 63A (Tc) 322W (Tc) Through Hole TO-247-3
DataSheet
Mfr
SemiQ
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4V @ 10mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
52mOhm @ 40A, 20V
Power Dissipation (Max)
322W (Tc)
Supplier Device Package
TO-247-3
Gate Charge (Qg) (Max) @ Vgs
118 nC @ 20 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
3192 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
63A (Tc)
AttributeValue
MfrSemiQ
FET TypeN-Channel
PackagingTube
Vgs (Max)+25V, -10V
TechnologySiCFET (Silicon Carbide)
Part StatusActive
Mounting TypeThrough Hole
Package / CaseTO-247-3
Vgs(th) (Max) @ Id4V @ 10mA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs52mOhm @ 40A, 20V
Power Dissipation (Max)322W (Tc)
Supplier Device PackageTO-247-3
Gate Charge (Qg) (Max) @ Vgs118 nC @ 20 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds3192 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C63A (Tc)

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Packing

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Step1: Product
Vacuum packaged product
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-StaticBag
Individual packaging box
Step4: Individual Packaging
Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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