ROHM Semiconductor SCT2280KEC

ROHM Semiconductor SCT2280KEC electronic component

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Manufacturer
Manufacturer No
SCT2280KEC
Package
TO-247-3
Packaging
Tube
Description
SICFET N-CH 1200V 14A TO247
Detailed Description
N-Channel 1200 V 14A (Tc) 108W (Tc) Through Hole TO-247
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Rohm Semiconductor
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+22V, -6V
Technology
SiCFET (Silicon Carbide)
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4V @ 1.4mA
Base Product Number
SCT2280
Operating Temperature
175°C (TJ)
Rds On (Max) @ Id, Vgs
364mOhm @ 4A, 18V
Power Dissipation (Max)
108W (Tc)
Supplier Device Package
TO-247
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 18 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
667 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
18V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
AttributeValue
MfrRohm Semiconductor
FET TypeN-Channel
PackagingTube
Vgs (Max)+22V, -6V
TechnologySiCFET (Silicon Carbide)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Vgs(th) (Max) @ Id4V @ 1.4mA
Base Product NumberSCT2280
Operating Temperature175°C (TJ)
Rds On (Max) @ Id, Vgs364mOhm @ 4A, 18V
Power Dissipation (Max)108W (Tc)
Supplier Device PackageTO-247
Gate Charge (Qg) (Max) @ Vgs36 nC @ 18 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds667 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)18V
Current - Continuous Drain (Id) @ 25°C14A (Tc)

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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