ROHM Semiconductor R6018ANJTL

ROHM Semiconductor R6018ANJTL electronic component

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Manufacturer
Manufacturer No
R6018ANJTL
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 600V 18A LPTS
Detailed Description
N-Channel 600 V 18A (Tc) 100W (Tc) Surface Mount LPTS
DataSheet
Mfr
Rohm Semiconductor
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4.5V @ 1mA
Base Product Number
R6018
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
270mOhm @ 9A, 10V
Power Dissipation (Max)
100W (Tc)
Supplier Device Package
LPTS
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
2050 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
AttributeValue
MfrRohm Semiconductor
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id4.5V @ 1mA
Base Product NumberR6018
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs270mOhm @ 9A, 10V
Power Dissipation (Max)100W (Tc)
Supplier Device PackageLPTS
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds2050 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C18A (Tc)

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