Renesas Electronics Corporation 2SD1436K-E

Renesas Electronics Corporation 2SD1436K-E electronic component

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Manufacturer No
2SD1436K-E
Package
TO-3P-3, SC-65-3
Packaging
Bulk
Description
TRANS NPN DARL 120V 10A TO-3P
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 120 V 10 A 80 W Through Hole TO-3P
DataSheet
Mfr
Renesas Electronics Corporation
Packaging
Bulk
Part Status
Active
Power - Max
80 W
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Transistor Type
NPN - Darlington
Operating Temperature
150°C (TJ)
Supplier Device Package
TO-3P
Vce Saturation (Max) @ Ib, Ic
3V @ 100mA, 10A
Current - Collector (Ic) (Max)
10 A
Current - Collector Cutoff (Max)
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A, 3V
Voltage - Collector Emitter Breakdown (Max)
120 V
AttributeValue
MfrRenesas Electronics Corporation
PackagingBulk
Part StatusActive
Power - Max80 W
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Supplier Device PackageTO-3P
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector (Ic) (Max)10 A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Voltage - Collector Emitter Breakdown (Max)120 V

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Packing

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Step2: Vacuum Packaging
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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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