Renesas Electronics Corporation 2SC5773JR-TL-E

Renesas Electronics Corporation 2SC5773JR-TL-E electronic component

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Manufacturer No
2SC5773JR-TL-E
Package
TO-236-3, SC-59, SOT-23-3
Packaging
Bulk
Description
RF TRANS NPN 6V 10.8GHZ 3-MPAK
Detailed Description
RF Transistor NPN 6V 80mA 10.8GHz 700mW Surface Mount 3-MPAK
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Gain
11.9dB
Packaging
Bulk
Power - Max
700mW
Manufacturer
Renesas Electronics Corporation
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Operating Temperature
150°C (TJ)
Frequency - Transition
10.8GHz
Supplier Device Package
3-MPAK
Noise Figure (dB Typ @ f)
1.1dB @ 900MHz
Current - Collector (Ic) (Max)
80mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max)
6V
AttributeValue
Gain11.9dB
PackagingBulk
Power - Max700mW
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Transistor TypeNPN
Operating Temperature150°C (TJ)
Frequency - Transition10.8GHz
Supplier Device Package3-MPAK
Noise Figure (dB Typ @ f)1.1dB @ 900MHz
Current - Collector (Ic) (Max)80mA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max)6V

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

Packages

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