Quest Semi QS1200SCM36

Quest Semi QS1200SCM36 electronic component

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Manufacturer
Manufacturer No
QS1200SCM36
Package
TO-247-3
Packaging
Tube
Description
1200V 36AMP SiC Mosfet
Detailed Description
N-Channel 1200 V 36A 198W Through Hole PG-TO247-3
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Quest Semi
Grade
Automotive
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
3.8V @ 100µA
Operating Temperature
-55°C ~ 175°C
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Power Dissipation (Max)
198W
Supplier Device Package
PG-TO247-3
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 600 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
1001 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
2.8V
Current - Continuous Drain (Id) @ 25°C
36A
AttributeValue
MfrQuest Semi
GradeAutomotive
FET TypeN-Channel
PackagingTube
Vgs (Max)+25V, -10V
TechnologySiCFET (Silicon Carbide)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Vgs(th) (Max) @ Id3.8V @ 100µA
Operating Temperature-55°C ~ 175°C
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Power Dissipation (Max)198W
Supplier Device PackagePG-TO247-3
Gate Charge (Qg) (Max) @ Vgs60 nC @ 600 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds1001 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)2.8V
Current - Continuous Drain (Id) @ 25°C36A

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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