onsemi NTHD4N02FT1G

onsemi NTHD4N02FT1G electronic component

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Manufacturer
Manufacturer No
NTHD4N02FT1G
Package
8-SMD, Flat Leads
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 20V 2.9A CHIPFET
Detailed Description
N-Channel 20 V 2.9A (Tj) 910mW (Tj) Surface Mount ChipFET™
DataSheet
Mfr
onsemi
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
FET Feature
Schottky Diode (Isolated)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Leads
Vgs(th) (Max) @ Id
1.2V @ 250µA
Base Product Number
NTHD4N
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
80mOhm @ 2.9A, 4.5V
Power Dissipation (Max)
910mW (Tj)
Supplier Device Package
ChipFET™
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 4.5 V
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C
2.9A (Tj)
AttributeValue
Mfronsemi
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
FET FeatureSchottky Diode (Isolated)
Part StatusObsolete
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Leads
Vgs(th) (Max) @ Id1.2V @ 250µA
Base Product NumberNTHD4N
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs80mOhm @ 2.9A, 4.5V
Power Dissipation (Max)910mW (Tj)
Supplier Device PackageChipFET™
Gate Charge (Qg) (Max) @ Vgs4 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.9A (Tj)

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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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