onsemi NTC020N120SC1

onsemi NTC020N120SC1 electronic component

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Manufacturer
Manufacturer No
NTC020N120SC1
Package
Die
Packaging
Tray
Description
SIC MOS WAFER SALES 20MOHM 1200V
Detailed Description
N-Channel 1200 V 103A (Tc) 535W (Tc) Surface Mount Die
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
onsemi
FET Type
N-Channel
Packaging
Tray
Vgs (Max)
+25V, -15V
Technology
SiCFET (Silicon Carbide)
Mounting Type
Surface Mount
Package / Case
Die
Vgs(th) (Max) @ Id
4.3V @ 20mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 20V
Power Dissipation (Max)
535W (Tc)
Supplier Device Package
Die
Gate Charge (Qg) (Max) @ Vgs
203 nC @ 20 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
2890 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
103A (Tc)
AttributeValue
Mfronsemi
FET TypeN-Channel
PackagingTray
Vgs (Max)+25V, -15V
TechnologySiCFET (Silicon Carbide)
Mounting TypeSurface Mount
Package / CaseDie
Vgs(th) (Max) @ Id4.3V @ 20mA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs28mOhm @ 60A, 20V
Power Dissipation (Max)535W (Tc)
Supplier Device PackageDie
Gate Charge (Qg) (Max) @ Vgs203 nC @ 20 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds2890 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C103A (Tc)

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

Packages

Product before packing

Step1: Product

Product in anti-static bag

Step2: Anti StaticBag

Product in individual packaging

Step3: Individual Packaging

Individual packaging box

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Packaging box with shipping label

Step5: Bar-Code Shipping Tags

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Step6: Shipping