onsemi FQPF7N10

onsemi FQPF7N10 electronic component

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Manufacturer
Manufacturer No
FQPF7N10
Package
TO-220-3 Full Pack
Packaging
Tube
Description
MOSFET N-CH 100V 5.5A TO220F
Detailed Description
N-Channel 100 V 5.5A (Tc) 23W (Tc) Through Hole TO-220F-3
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
onsemi
Series
QFET®
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
FQPF7
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
350mOhm @ 2.75A, 10V
Power Dissipation (Max)
23W (Tc)
Supplier Device Package
TO-220F-3
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
AttributeValue
Mfronsemi
SeriesQFET®
FET TypeN-Channel
PackagingTube
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Vgs(th) (Max) @ Id4V @ 250µA
Base Product NumberFQPF7
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs350mOhm @ 2.75A, 10V
Power Dissipation (Max)23W (Tc)
Supplier Device PackageTO-220F-3
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 4, 2026 - Oct 5, 2026
Shipping Fee
Calculated based on your destination

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