onsemi FDC642P-F085PBK

onsemi FDC642P-F085PBK electronic component

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Manufacturer
Manufacturer No
FDC642P-F085PBK
Package
SOT-23-6 Thin, TSOT-23-6
Packaging
Cut Tape (CT); ; Bulk
Description
P-CHANNEL POWERTRENCH MOSFET, -2
Detailed Description
P-Channel 20 V 4A (Ta) 1.2W (Ta) Surface Mount TSOT-23-6
DataSheet
Mfr
onsemi
Grade
Automotive
Series
PowerTrench®
FET Type
P-Channel
Packaging
Cut Tape (CT); Digi-Reel®; Bulk
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Qualification
AEC-Q101
Package / Case
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id
1.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
65mOhm @ 4A, 4.5V
Power Dissipation (Max)
1.2W (Ta)
Supplier Device Package
TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 4.5 V
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
630 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
AttributeValue
Mfronsemi
GradeAutomotive
SeriesPowerTrench®
FET TypeP-Channel
PackagingCut Tape (CT); Digi-Reel®; Bulk
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
QualificationAEC-Q101
Package / CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id1.5V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs65mOhm @ 4A, 4.5V
Power Dissipation (Max)1.2W (Ta)
Supplier Device PackageTSOT-23-6
Gate Charge (Qg) (Max) @ Vgs9 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds630 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C4A (Ta)

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Packing

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Shipping Information

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DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
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EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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