NXP Semiconductors PMXB350UPEZ

NXP Semiconductors PMXB350UPEZ electronic component

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Manufacturer
Manufacturer No
PMXB350UPEZ
Quantity
5000
Availability
In Stock
Package
3-XDFN Exposed Pad
Packaging
Bulk
Description
NEXPERIA PMXB350UPE - 20 V, P-CH
Detailed Description
P-Channel 20 V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3
DataSheet
Mfr
NXP Semiconductors
FET Type
P-Channel
Packaging
Bulk
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Vgs(th) (Max) @ Id
950mV @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
447mOhm @ 1.2A, 4.5V
Power Dissipation (Max)
360mW (Ta), 5.68W (Tc)
Supplier Device Package
DFN1010D-3
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
116 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)
AttributeValue
MfrNXP Semiconductors
FET TypeP-Channel
PackagingBulk
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / Case3-XDFN Exposed Pad
Vgs(th) (Max) @ Id950mV @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs447mOhm @ 1.2A, 4.5V
Power Dissipation (Max)360mW (Ta), 5.68W (Tc)
Supplier Device PackageDFN1010D-3
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds116 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.2A (Ta)

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Packing

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Step1: Product
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Step2: Vacuum Packaging
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Step3: Anti-StaticBag
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Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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