NovuSem NC1M120C75HTNG

NovuSem NC1M120C75HTNG electronic component

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Manufacturer
Manufacturer No
NC1M120C75HTNG
Package
TO-247-4
Packaging
Tube
Description
SiC MOSFET N 1200V 75mohm 47A 4
Detailed Description
N-Channel 1200 V 47A (Tc) 288W (Ta) Through Hole TO-247-4L
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
NovuSem
Series
NC1M
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+20V, -5V
Technology
SiCFET (Silicon Carbide)
Mounting Type
Through Hole
Package / Case
TO-247-4
Vgs(th) (Max) @ Id
2.8V @ 5mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
75mOhm @ 20A, 20V
Power Dissipation (Max)
288W (Ta)
Supplier Device Package
TO-247-4L
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
AttributeValue
MfrNovuSem
SeriesNC1M
FET TypeN-Channel
PackagingTube
Vgs (Max)+20V, -5V
TechnologySiCFET (Silicon Carbide)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Vgs(th) (Max) @ Id2.8V @ 5mA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs75mOhm @ 20A, 20V
Power Dissipation (Max)288W (Ta)
Supplier Device PackageTO-247-4L
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C47A (Tc)

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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