Navitas Semiconductor, Inc. GE08MPS06A

Navitas Semiconductor, Inc. GE08MPS06A electronic component

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Manufacturer No
GE08MPS06A
Package
TO-220-2
Packaging
Tube
Description
DIODE SIL CARB 650V 15A TO220-2
Detailed Description
Diode 650 V 15A Through Hole TO-220-2
DataSheet
Mfr
Navitas Semiconductor, Inc.
Speed
Zero Recovery Time > 500mA (Io)
Series
SiC Schottky MPS™
Packaging
Tube
Technology
SiC (Silicon Carbide) Schottky
Part Status
Discontinued at DigiKey
Mounting Type
Through Hole
Package / Case
TO-220-2
Base Product Number
GE08MPS06
Capacitance @ Vr, F
373pF @ 1V, 1MHz
Supplier Device Package
TO-220-2
Reverse Recovery Time (trr)
0 ns
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
15A
Operating Temperature - Junction
-55°C ~ 175°C
AttributeValue
MfrNavitas Semiconductor, Inc.
SpeedZero Recovery Time > 500mA (Io)
SeriesSiC Schottky MPS™
PackagingTube
TechnologySiC (Silicon Carbide) Schottky
Part StatusDiscontinued at DigiKey
Mounting TypeThrough Hole
Package / CaseTO-220-2
Base Product NumberGE08MPS06
Capacitance @ Vr, F373pF @ 1V, 1MHz
Supplier Device PackageTO-220-2
Reverse Recovery Time (trr)0 ns
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)15A
Operating Temperature - Junction-55°C ~ 175°C

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