Microchip Technology MSC017SMA120B4

Microchip Technology MSC017SMA120B4 electronic component

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Manufacturer No
MSC017SMA120B4
Package
TO-247-4
Packaging
Bulk
Description
MOSFET SIC 1200V 17 MOHM TO-247
Detailed Description
N-Channel 1200 V 113A (Tc) 455W (Tc) Through Hole TO-247-4
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Microchip Technology
Series
MSiC™ MA
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
+22V, -10V
Technology
SiCFET (Silicon Carbide)
Mounting Type
Through Hole
Package / Case
TO-247-4
Vgs(th) (Max) @ Id
2.7V @ 4.5mA (Typ)
Base Product Number
MSC017SMA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
22mOhm @ 40A, 20V
Power Dissipation (Max)
455W (Tc)
Supplier Device Package
TO-247-4
Gate Charge (Qg) (Max) @ Vgs
249 nC @ 20 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
5280 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
113A (Tc)
AttributeValue
MfrMicrochip Technology
SeriesMSiC™ MA
FET TypeN-Channel
PackagingBulk
Vgs (Max)+22V, -10V
TechnologySiCFET (Silicon Carbide)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Vgs(th) (Max) @ Id2.7V @ 4.5mA (Typ)
Base Product NumberMSC017SMA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs22mOhm @ 40A, 20V
Power Dissipation (Max)455W (Tc)
Supplier Device PackageTO-247-4
Gate Charge (Qg) (Max) @ Vgs249 nC @ 20 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds5280 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C113A (Tc)

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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