Microchip Technology APT8020B2LLG

Microchip Technology APT8020B2LLG electronic component

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Manufacturer No
APT8020B2LLG
Package
TO-247-3 Variant
Packaging
Tube
Description
MOSFET N-CH 800V 38A T-MAX
Detailed Description
N-Channel 800 V 38A (Tc) 694W (Tc) Through Hole T-MAX™ [B2]
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Microchip Technology
Series
POWER MOS 7®
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Vgs(th) (Max) @ Id
5V @ 2.5mA
Base Product Number
APT8020
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
200mOhm @ 19A, 10V
Power Dissipation (Max)
694W (Tc)
Supplier Device Package
T-MAX™ [B2]
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V
Drain to Source Voltage (Vdss)
800 V
Input Capacitance (Ciss) (Max) @ Vds
5200 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
AttributeValue
MfrMicrochip Technology
SeriesPOWER MOS 7®
FET TypeN-Channel
PackagingTube
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Vgs(th) (Max) @ Id5V @ 2.5mA
Base Product NumberAPT8020
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs200mOhm @ 19A, 10V
Power Dissipation (Max)694W (Tc)
Supplier Device PackageT-MAX™ [B2]
Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
Drain to Source Voltage (Vdss)800 V
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C38A (Tc)

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
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