Microchip Technology APT11F80B

Microchip Technology APT11F80B electronic component

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Manufacturer No
APT11F80B
Package
TO-247-3
Packaging
Tube
Description
MOSFET N-CH 800V 12A TO247
Detailed Description
N-Channel 800 V 12A (Tc) 337W (Tc) Through Hole TO-247 [B]
DataSheet
Mfr
Microchip Technology
Series
POWER MOS 8™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
5V @ 1mA
Base Product Number
APT11F80
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
900mOhm @ 6A, 10V
Power Dissipation (Max)
337W (Tc)
Supplier Device Package
TO-247 [B]
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Drain to Source Voltage (Vdss)
800 V
Input Capacitance (Ciss) (Max) @ Vds
2471 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
AttributeValue
MfrMicrochip Technology
SeriesPOWER MOS 8™
FET TypeN-Channel
PackagingTube
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeThrough Hole
Package / CaseTO-247-3
Vgs(th) (Max) @ Id5V @ 1mA
Base Product NumberAPT11F80
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs900mOhm @ 6A, 10V
Power Dissipation (Max)337W (Tc)
Supplier Device PackageTO-247 [B]
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Drain to Source Voltage (Vdss)800 V
Input Capacitance (Ciss) (Max) @ Vds2471 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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