IXYS IXTA3N150HV

IXYS IXTA3N150HV electronic component

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Manufacturer
Manufacturer No
IXTA3N150HV
Quantity
6
Availability
In Stock
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tube
Description
MOSFET N-CH 1500V 3A TO263
Detailed Description
N-Channel 1500 V 3A (Tc) 250W (Tc) Surface Mount TO-263AA
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
IXYS
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
5V @ 250µA
Base Product Number
IXTA3
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
7.3Ohm @ 1.5A, 10V
Power Dissipation (Max)
250W (Tc)
Supplier Device Package
TO-263AA
Gate Charge (Qg) (Max) @ Vgs
38.6 nC @ 10 V
Drain to Source Voltage (Vdss)
1500 V
Input Capacitance (Ciss) (Max) @ Vds
1375 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
AttributeValue
MfrIXYS
FET TypeN-Channel
PackagingTube
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id5V @ 250µA
Base Product NumberIXTA3
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs7.3Ohm @ 1.5A, 10V
Power Dissipation (Max)250W (Tc)
Supplier Device PackageTO-263AA
Gate Charge (Qg) (Max) @ Vgs38.6 nC @ 10 V
Drain to Source Voltage (Vdss)1500 V
Input Capacitance (Ciss) (Max) @ Vds1375 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3A (Tc)

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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