IXYS IXFH30N85X

IXYS IXFH30N85X electronic component

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Manufacturer
Manufacturer No
IXFH30N85X
Quantity
1
Availability
In Stock
Package
TO-247-3
Packaging
Tube
Description
MOSFET N-CH 850V 30A TO247AD
Detailed Description
N-Channel 850 V 30A (Tc) 695W (Tc) Through Hole TO-247 (IXTH)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
IXYS
Series
HiPerFET™, Ultra X
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
Base Product Number
IXFH30
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
220mOhm @ 500mA, 10V
Power Dissipation (Max)
695W (Tc)
Supplier Device Package
TO-247 (IXTH)
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Drain to Source Voltage (Vdss)
850 V
Input Capacitance (Ciss) (Max) @ Vds
2460 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
AttributeValue
MfrIXYS
SeriesHiPerFET™, Ultra X
FET TypeN-Channel
PackagingTube
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Vgs(th) (Max) @ Id5.5V @ 2.5mA
Base Product NumberIXFH30
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs220mOhm @ 500mA, 10V
Power Dissipation (Max)695W (Tc)
Supplier Device PackageTO-247 (IXTH)
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Drain to Source Voltage (Vdss)850 V
Input Capacitance (Ciss) (Max) @ Vds2460 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C30A (Tc)

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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