Step1: Product
Inventchip IV2Q06040L1
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Manufacturer
Manufacturer No
IV2Q06040L1
Package
TOLL
Packaging
Strip
Description
GEN 2, SIC MOSFET, 650V 40MOHM,
Detailed Description
N-Channel 650 V 63.5A (Tc) 249W (Tc) Through Hole TOLL
Datasheet
Mfr
Inventchip
FET Type
N-Channel
Packaging
Strip
Vgs (Max)
+20V, -5V
Technology
SiCFET (Silicon Carbide)
Mounting Type
Through Hole
Package / Case
TOLL
Vgs(th) (Max) @ Id
4.5V @ 7.5mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
53mOhm @ 20A, 18V
Power Dissipation (Max)
249W (Tc)
Supplier Device Package
TOLL
Gate Charge (Qg) (Max) @ Vgs
94.7 nC @ 18 V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 600 V
Drive Voltage (Max Rds On, Min Rds On)
18V
Current - Continuous Drain (Id) @ 25°C
63.5A (Tc)
| Attribute | Value |
|---|---|
| Mfr | Inventchip |
| FET Type | N-Channel |
| Packaging | Strip |
| Vgs (Max) | +20V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| Mounting Type | Through Hole |
| Package / Case | TOLL |
| Vgs(th) (Max) @ Id | 4.5V @ 7.5mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 20A, 18V |
| Power Dissipation (Max) | 249W (Tc) |
| Supplier Device Package | TOLL |
| Gate Charge (Qg) (Max) @ Vgs | 94.7 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 63.5A (Tc) |
Purchase & Inquiry
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Important Notes
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Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 3, 2026 - Oct 4, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
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