Infineon Technologies SPD11N10

Infineon Technologies SPD11N10 electronic component

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Manufacturer No
SPD11N10
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 100V 10.5A TO252-3
Detailed Description
N-Channel 100 V 10.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11
DataSheet
Mfr
Infineon Technologies
Series
SIPMOS®
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
4V @ 21µA
Base Product Number
SPD11N
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
170mOhm @ 7.8A, 10V
Power Dissipation (Max)
50W (Tc)
Supplier Device Package
PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs
18.3 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
10.5A (Tc)
AttributeValue
MfrInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id4V @ 21µA
Base Product NumberSPD11N
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs170mOhm @ 7.8A, 10V
Power Dissipation (Max)50W (Tc)
Supplier Device PackagePG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs18.3 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)

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