Infineon Technologies SPB80N06S08ATMA1

Infineon Technologies SPB80N06S08ATMA1 electronic component

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Manufacturer No
SPB80N06S08ATMA1
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 55V 80A TO263-3
Detailed Description
N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
DataSheet
Mfr
Infineon Technologies
Grade
Automotive
Series
SIPMOS®
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Qualification
AEC-Q101
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4V @ 240µA
Base Product Number
SPB80N
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
7.7mOhm @ 80A, 10V
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs
187 nC @ 10 V
Drain to Source Voltage (Vdss)
55 V
Input Capacitance (Ciss) (Max) @ Vds
3660 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
AttributeValue
MfrInfineon Technologies
GradeAutomotive
SeriesSIPMOS®
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
QualificationAEC-Q101
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id4V @ 240µA
Base Product NumberSPB80N
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs7.7mOhm @ 80A, 10V
Power Dissipation (Max)300W (Tc)
Supplier Device PackagePG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs187 nC @ 10 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds3660 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)

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