Infineon Technologies SPB20N60S5ATMA1

Infineon Technologies SPB20N60S5ATMA1 electronic component

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Manufacturer No
SPB20N60S5ATMA1
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 600V 20A TO263-3
Detailed Description
N-Channel 600 V 20A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Infineon Technologies
Series
CoolMOS™
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
5.5V @ 1mA
Base Product Number
SPB20N
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
190mOhm @ 13A, 10V
Power Dissipation (Max)
208W (Tc)
Supplier Device Package
PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs
103 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
AttributeValue
MfrInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id5.5V @ 1mA
Base Product NumberSPB20N
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs190mOhm @ 13A, 10V
Power Dissipation (Max)208W (Tc)
Supplier Device PackagePG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs103 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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