Infineon Technologies IRFU7540PBF

Infineon Technologies IRFU7540PBF electronic component

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Manufacturer No
IRFU7540PBF
Package
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging
Tube
Description
MOSFET N-CH 60V 90A IPAK
Detailed Description
N-Channel 60 V 90A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
DataSheet
Mfr
Infineon Technologies
Series
HEXFET®, StrongIRFET™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Vgs(th) (Max) @ Id
3.7V @ 100µA
Base Product Number
IRFU7540
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
4.8mOhm @ 66A, 10V
Power Dissipation (Max)
140W (Tc)
Supplier Device Package
IPAK (TO-251AA)
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
4360 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
AttributeValue
MfrInfineon Technologies
SeriesHEXFET®, StrongIRFET™
FET TypeN-Channel
PackagingTube
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Vgs(th) (Max) @ Id3.7V @ 100µA
Base Product NumberIRFU7540
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs4.8mOhm @ 66A, 10V
Power Dissipation (Max)140W (Tc)
Supplier Device PackageIPAK (TO-251AA)
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds4360 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C90A (Tc)

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