Infineon Technologies IRF9952PBF

Infineon Technologies IRF9952PBF electronic component

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Manufacturer No
IRF9952PBF
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
Tube
Description
MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Detailed Description
Mosfet Array 30V 3.5A, 2.3A 2W Surface Mount 8-SO
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Series
HEXFET®
Packaging
Tube
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
2W
Manufacturer
Infineon Technologies
Configuration
N and P-Channel
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
1V @ 250µA
Base Product Number
IRF995
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
100mOhm @ 2.2A, 10V
Supplier Device Package
8-SO
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 15V
Current - Continuous Drain (Id) @ 25°C
3.5A, 2.3A
AttributeValue
SeriesHEXFET®
PackagingTube
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Power - Max2W
ManufacturerInfineon Technologies
ConfigurationN and P-Channel
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id1V @ 250µA
Base Product NumberIRF995
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs100mOhm @ 2.2A, 10V
Supplier Device Package8-SO
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds190pF @ 15V
Current - Continuous Drain (Id) @ 25°C3.5A, 2.3A

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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