Infineon Technologies IRF530NSTRLPBF

Infineon Technologies IRF530NSTRLPBF electronic component

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Manufacturer No
IRF530NSTRLPBF
Quantity
1365
Availability
In Stock
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET N-CH 100V 17A D2PAK
Detailed Description
N-Channel 100 V 17A (Tc) 3.8W (Ta), 70W (Tc) Surface Mount D2PAK
DataSheet
Mfr
Infineon Technologies
Series
HEXFET®
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
IRF530
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
90mOhm @ 9A, 10V
Power Dissipation (Max)
3.8W (Ta), 70W (Tc)
Supplier Device Package
D2PAK
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
AttributeValue
MfrInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id4V @ 250µA
Base Product NumberIRF530
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs90mOhm @ 9A, 10V
Power Dissipation (Max)3.8W (Ta), 70W (Tc)
Supplier Device PackageD2PAK
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C17A (Tc)

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