Infineon Technologies IRF3315LPBF

Infineon Technologies IRF3315LPBF electronic component

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Manufacturer No
IRF3315LPBF
Package
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging
Tube
Description
MOSFET N-CH 150V 21A TO262
Detailed Description
N-Channel 150 V 21A (Tc) 3.8W (Ta), 94W (Tc) Through Hole TO-262
DataSheet
Mfr
Infineon Technologies
Series
HEXFET®
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
82mOhm @ 12A, 10V
Power Dissipation (Max)
3.8W (Ta), 94W (Tc)
Supplier Device Package
TO-262
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Drain to Source Voltage (Vdss)
150 V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
AttributeValue
MfrInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
PackagingTube
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Vgs(th) (Max) @ Id4V @ 250µA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs82mOhm @ 12A, 10V
Power Dissipation (Max)3.8W (Ta), 94W (Tc)
Supplier Device PackageTO-262
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C21A (Tc)

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