Infineon Technologies BSP129H6906XTSA1

Infineon Technologies BSP129H6906XTSA1 electronic component

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Manufacturer No
BSP129H6906XTSA1
Package
TO-261-4, TO-261AA
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 240V 350MA SOT223-4
Detailed Description
N-Channel, Depletion Mode 240 V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Infineon Technologies
Grade
Automotive
Series
SIPMOS™
FET Type
N-Channel, Depletion Mode
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Qualification
AEC-Q101
Package / Case
TO-261-4, TO-261AA
Vgs(th) (Max) @ Id
1V @ 108µA
Base Product Number
BSP129
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
6Ohm @ 350mA, 10V
Power Dissipation (Max)
1.8W (Ta)
Supplier Device Package
PG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs
5.7 nC @ 5 V
Drain to Source Voltage (Vdss)
240 V
Input Capacitance (Ciss) (Max) @ Vds
108 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Current - Continuous Drain (Id) @ 25°C
350mA (Ta)
AttributeValue
MfrInfineon Technologies
GradeAutomotive
SeriesSIPMOS™
FET TypeN-Channel, Depletion Mode
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
QualificationAEC-Q101
Package / CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ Id1V @ 108µA
Base Product NumberBSP129
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs6Ohm @ 350mA, 10V
Power Dissipation (Max)1.8W (Ta)
Supplier Device PackagePG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs5.7 nC @ 5 V
Drain to Source Voltage (Vdss)240 V
Input Capacitance (Ciss) (Max) @ Vds108 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Current - Continuous Drain (Id) @ 25°C350mA (Ta)

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 4, 2026 - Oct 5, 2026
Shipping Fee
Calculated based on your destination

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