Infineon Technologies BSD235N L6327

Infineon Technologies BSD235N L6327 electronic component

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Manufacturer No
BSD235N L6327
Package
6-VSSOP, SC-88, SOT-363
Packaging
Tape & Reel (TR)
Description
MOSFET 2N-CH 20V 0.95A SOT363
Detailed Description
Mosfet Array 20V 950mA 500mW Surface Mount PG-SOT363-PO
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Grade
Automotive
Series
OptiMOS™ 2
Packaging
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
500mW
Manufacturer
Infineon Technologies
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
Qualification
AEC-Q101
Package / Case
6-VSSOP, SC-88, SOT-363
Vgs(th) (Max) @ Id
1.2V @ 1.6µA
Base Product Number
BSD235
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
350mOhm @ 950mA, 4.5V
Supplier Device Package
PG-SOT363-PO
Gate Charge (Qg) (Max) @ Vgs
0.32nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
63pF @ 10V
Current - Continuous Drain (Id) @ 25°C
950mA
AttributeValue
GradeAutomotive
SeriesOptiMOS™ 2
PackagingTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Power - Max500mW
ManufacturerInfineon Technologies
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
QualificationAEC-Q101
Package / Case6-VSSOP, SC-88, SOT-363
Vgs(th) (Max) @ Id1.2V @ 1.6µA
Base Product NumberBSD235
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs350mOhm @ 950mA, 4.5V
Supplier Device PackagePG-SOT363-PO
Gate Charge (Qg) (Max) @ Vgs0.32nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds63pF @ 10V
Current - Continuous Drain (Id) @ 25°C950mA

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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