Harris Corporation RF1S640SM

Harris Corporation RF1S640SM electronic component

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Manufacturer
Manufacturer No
RF1S640SM
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Bulk
Description
MOSFET N-CH 200V 18A TO263AB
Detailed Description
N-Channel 200 V 18A (Tc) 125W (Tc) Surface Mount TO-263AB
DataSheet
Mfr
Harris Corporation
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 10V
Power Dissipation (Max)
125W (Tc)
Supplier Device Package
TO-263AB
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Drain to Source Voltage (Vdss)
200 V
Input Capacitance (Ciss) (Max) @ Vds
1275 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
AttributeValue
MfrHarris Corporation
FET TypeN-Channel
PackagingBulk
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id4V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs180mOhm @ 10A, 10V
Power Dissipation (Max)125W (Tc)
Supplier Device PackageTO-263AB
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds1275 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)

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Packing

Product before packing
Step1: Product
Vacuum packaged product
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-StaticBag
Individual packaging box
Step4: Individual Packaging
Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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