Goford Semiconductor GT52N10T

Goford Semiconductor GT52N10T electronic component

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Manufacturer No
GT52N10T
Package
TO-220-3
Packaging
Tube
Description
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
Detailed Description
N-Channel 100 V 70A (Tc) 100W (Tc) Through Hole TO-220
DataSheet
Mfr
Goford Semiconductor
Series
SGT
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
3V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
9mOhm @ 50A, 10V
Power Dissipation (Max)
100W (Tc)
Supplier Device Package
TO-220
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
2273 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
AttributeValue
MfrGoford Semiconductor
SeriesSGT
FET TypeN-Channel
PackagingTube
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeThrough Hole
Package / CaseTO-220-3
Vgs(th) (Max) @ Id3V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs9mOhm @ 50A, 10V
Power Dissipation (Max)100W (Tc)
Supplier Device PackageTO-220
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds2273 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C70A (Tc)

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