Goford Semiconductor G65P06F

Goford Semiconductor G65P06F electronic component

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Manufacturer No
G65P06F
Package
TO-220-3 Full Pack
Packaging
Tube
Description
P-CH, -60V, 65A, RD(MAX)<18M@-10
Detailed Description
P-Channel 60 V 65A (Tc) 39W (Tc) Through Hole TO-220F
DataSheet
Mfr
Goford Semiconductor
Series
TrenchFET®
FET Type
P-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
3.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
18mOhm @ 20A, 10V
Power Dissipation (Max)
39W (Tc)
Supplier Device Package
TO-220F
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
6477 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
AttributeValue
MfrGoford Semiconductor
SeriesTrenchFET®
FET TypeP-Channel
PackagingTube
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Vgs(th) (Max) @ Id3.5V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs18mOhm @ 20A, 10V
Power Dissipation (Max)39W (Tc)
Supplier Device PackageTO-220F
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds6477 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C65A (Tc)

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Packing

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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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