Goford Semiconductor G120P06M

Goford Semiconductor G120P06M electronic component

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Manufacturer No
G120P06M
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tape & Reel (TR)
Description
MOSFET P-CH -60V 120A TO-263-3
Detailed Description
P-Channel 60 V 120A (Tc) 277W Surface Mount D2PAK
DataSheet
Mfr
Goford Semiconductor
Series
TrenchFET
FET Type
P-Channel
Packaging
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
8.5mOhm @ 20A, 10V
Power Dissipation (Max)
277W
Supplier Device Package
D2PAK
Gate Charge (Qg) (Max) @ Vgs
230 nC @ -10 V
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
12215 pF @ -30 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
AttributeValue
MfrGoford Semiconductor
SeriesTrenchFET
FET TypeP-Channel
PackagingTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs8.5mOhm @ 20A, 10V
Power Dissipation (Max)277W
Supplier Device PackageD2PAK
Gate Charge (Qg) (Max) @ Vgs230 nC @ -10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds12215 pF @ -30 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)

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