GaNPower GPI65015TO

GaNPower GPI65015TO electronic component

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Manufacturer
Manufacturer No
GPI65015TO
Package
TO-220-3
Packaging
Tube
Description
GANFET N-CH 650V 15A TO220
Detailed Description
N-Channel 650 V 15A Through Hole TO-220-3
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
GaNPower
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+7.5V, -12V
Technology
GaNFET (Gallium Nitride)
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
1.2V @ 3.5mA
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
3.3 nC @ 6 V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
123 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)
6V
Current - Continuous Drain (Id) @ 25°C
15A
AttributeValue
MfrGaNPower
FET TypeN-Channel
PackagingTube
Vgs (Max)+7.5V, -12V
TechnologyGaNFET (Gallium Nitride)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Vgs(th) (Max) @ Id1.2V @ 3.5mA
Operating Temperature-55°C ~ 150°C (TJ)
Supplier Device PackageTO-220-3
Gate Charge (Qg) (Max) @ Vgs3.3 nC @ 6 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds123 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)6V
Current - Continuous Drain (Id) @ 25°C15A

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

Packages

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Step1: Product

Product in anti-static bag

Step2: Anti StaticBag

Product in individual packaging

Step3: Individual Packaging

Individual packaging box

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Packaging box with shipping label

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Step6: Shipping