Fairchild Semiconductor FDP39N20

Fairchild Semiconductor FDP39N20 electronic component

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Manufacturer No
FDP39N20
Quantity
738
Availability
In Stock
Package
TO-220-3
Packaging
Bulk
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Detailed Description
N-Channel 200 V 39A (Tc) 251W (Tc) Through Hole TO-220-3
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Fairchild Semiconductor
Series
UniFET™
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
66mOhm @ 19.5A, 10V
Power Dissipation (Max)
251W (Tc)
Supplier Device Package
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Drain to Source Voltage (Vdss)
200 V
Input Capacitance (Ciss) (Max) @ Vds
2130 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
39A (Tc)
AttributeValue
MfrFairchild Semiconductor
SeriesUniFET™
FET TypeN-Channel
PackagingBulk
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Vgs(th) (Max) @ Id5V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs66mOhm @ 19.5A, 10V
Power Dissipation (Max)251W (Tc)
Supplier Device PackageTO-220-3
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds2130 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C39A (Tc)

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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